THERMOCHEMICAL DRY ETCHING OF SINGLE-CRYSTAL FERRITE BY LASER IRRADIATION IN CCL4 GAS ATMOSPHERE

被引：19

作者：

TAKAI, M

LU, YF

KOIZUMI, T

NAMBA, S

NAGATOMO, S

机构：

[1] DS SCANNER CO LTD,HIGASHI KU,OSAKA 540,JAPAN

[2] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 46卷 / 03期

关键词：

D O I：

10.1007/BF00939264

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：197 / 205

页数：9

共 20 条

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[6]

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[7] MASKLESS DRY ETCHING OF GALLIUM-ARSENIDE WITH A SUB-MICRON LINEWIDTH BY LASER PYROLYSIS IN CCL4 GAS ATMOSPHERE [J].

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[9] LOCAL TEMPERATURE RISE DURING LASER-INDUCED ETCHING OF GALLIUM-ARSENIDE IN SICL4 ATMOSPHERE [J].

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[10] LASER-INDUCED THERMOCHEMICAL MASKLESS-ETCHING OF III-V COMPOUND SEMICONDUCTORS IN CHLORIDE GAS ATMOSPHERE [J].

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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (04) :305-312

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