CALCULATION OF CHANNELING EFFECTS DURING ION-IMPLANTATION USING THE BOLTZMANN TRANSPORT-EQUATION

被引：5

作者：

GILES, MD ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1985年 / 4卷 / 04期

关键词：

D O I：

10.1109/TCAD.1985.1270133

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：362 / 368

页数：7

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