DETERMINATION OF EPITAXIAL ALXGA1-XAS COMPOSITION FROM X-RAY-DIFFRACTION MEASUREMENTS

被引：51

作者：

GOORSKY, MS ^{[1
]}

KUECH, TF ^{[1
]}

TISCHLER, MA ^{[1
]}

POTEMSKI, RM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,POB 218,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 18期

关键词：

D O I：

10.1063/1.106040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The correlation between the aluminum composition in epitaxial AlxGa1-xAs and double crystal x-ray diffraction measurements was quantitatively determined. The angular separation DELTA-Kelvin, between the diffraction peaks from the AlxGa1-xAs layer grown by metalorganic vapor phase epitaxy and the GaAs substrate increased nonlinearly with the Al content, which was independently determined using photoluminescence and electron microprobe measurements. The calibration curve was used to determine AlAs materials parameters. The AlAs lattice constant and Poisson ratio were determined to be 5.6622 angstrom and 0.275, respectively, assuming that the GaAs parameters are 5.65325 angstrom and 0.311.

引用

页码：2269 / 2271

页数：3