ANALYSIS OF THERMALLY STIMULATED CAPACITOR-DISCHARGE METHOD FOR CHARACTERIZING LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS

被引：27

作者：

AGARWAL, SC ^{[1
]}

机构：

[1] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637

来源：

PHYSICAL REVIEW B | 1974年 / 10卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.10.4340

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4340 / 4350

页数：11

共 41 条

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[4] Aver'yanov V. L., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P394
[5] AVERYANOV VL, 1970, SOV PHYS SEMICOND+, V4, P329
[6] AVERYANOV VL, 1973, SOV PHYS SEMICOND+, V6, P1476
[7] AVERYANOV VL, 1972, FIZ TEKH POLUPROV, V6, P1709
[8] CALCULATION OF ELECTRON TRAP DEPTHS FROM THERMOLUMINESCENCE MAXIMA
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[J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1954, 32 (02): : 214 - 215
[9] EXPERIMENTAL INVESTIGATION OF LOCALIZED STATES IN AMORPHOUS CHALCOGENIDE FILMS
BOTILA, T
VESCAN, L
VANCU, A
SLADARU, S
IOANID, G
LAZARESC.M
[J]. THIN SOLID FILMS, 1972, 12 (02) : 223 - &
[10] CARSLAW HS, 1959, CONDUCTION HEAT SOLI