BUILDUP AND DARK DECAY OF TRANSIENT PHOTOREFRACTIVE GRATINGS IN REDUCED KNBO3

被引:28
作者
BIAGGIO, I
ZGONIK, M
GUNTER, P
机构
[1] Institute of Quantum Electronics, Swiss Federal Institute of Technology, ETH-Hönggerberg
关键词
D O I
10.1016/0030-4018(90)90098-E
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Build-up and decay of transient photorefractive gratings written with 200 ns pulses (intensity up to 20 kW/cm2) in reduced KNbO3 were studied. Grating build-up times of about 1 μs were measured. Saturation effects and fast transients preceding a millisecond dark decay were observed. From an accurate measurement of the temperature dependence of the dark decay we could identify a component with an activation energy of 0.3 eV that may be attributed to a shallow trap level. The measurements were compared with the results of computer simulations based on the band transport model. The observed phenomena can be described by a single carrier model assuming that an additional shallow electron trapping level is present below the conduction band. © 1990.
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页码:312 / 317
页数:6
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