A GAINASP/INP TAPERED-WAVE-GUIDE SEMICONDUCTOR-LASER AMPLIFIER INTEGRATED WITH A 1.5 MU-M DISTRIBUTED FEEDBACK LASER

被引：14

作者：

YAZAKI, PA

KOMORI, K

BENDELLI, G

ARAI, S

SUEMATSU, Y

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 12期

关键词：

D O I：

10.1109/68.118000

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaInAsP/InP exponentially tapered-waveguide semiconductor laser amplifier (SLA) was fabricated and monolithically integrated with a 1.5-mu-m wavelength phase-adjusted distributed feedback (DFB) laser for the first time. A narrow beam divergence of FWHM = 5.5-degrees and stable single longitudinal mode operation were obtained with the output waveguide width of 20-mu-m by adopting both a window structure and 7-degrees angled facets.

引用

页码：1060 / 1063

页数：4

共 11 条

[1] DENSITY-MATRIX THEORY OF SEMICONDUCTOR-LASERS WITH RELAXATION BROADENING MODEL - GAIN AND GAIN-SUPPRESSION IN SEMICONDUCTOR-LASERS
ASADA, M
SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (05) : 434 - 442
[2] A NEW STRUCTURE FOR HIGH-POWER TW-SLA
BENDELLI, G
KOMORI, K
ARAI, S
SUEMATSU, Y
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (01) : 42 - 44
[3] BENDELLI G, IN PRESS IEEE J QUAN
[4] AXIAL MODE SELECTIVITY IN ACTIVE DISTRIBUTED-REFLECTOR FOR DYNAMIC-SINGLE-MODE LASERS
EDA, N
FURUYA, K
KOYAMA, F
SUEMATSU, Y
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (02) : 400 - 407
[5] EISNESTEIN G, 1989, 7TH P INT C INT OPT, P62
[6] GOLDBERG L, 1990, 12TH P IEEE INT SEM, P13
[7] KOREN U, 1990, 12TH P IEEE INT SEM, P162
[8] MAGARI K, 1990, P REG NAT CONV RES I
[9] GAIN, FREQUENCY BANDWIDTH, AND SATURATION OUTPUT POWER OF ALGAAS DH LASER-AMPLIFIERS
MUKAI, T
YAMAMOTO, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (06) : 1028 - 1034
[10] UTAKA K, 1984, IEEE J QUANTUM ELECT, V20

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