PHOTOLUMINESCENCE STUDY OF EXCITONS LOCALIZED IN INDIRECT-GAP GAAS1-XPX

被引：27

作者：

LAI, ST

KLEIN, MV

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.29.3217

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3217 / 3224

页数：8

共 20 条

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KLEIN, MV
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