ENHANCED AND INHIBITED SPONTANEOUS EMISSION OF FREE-EXCITONS IN GAAS QUANTUM-WELLS IN A MICROCAVITY

被引：64

作者：

YAMAMOTO, Y ^{[1
]}

MACHIDA, S ^{[1
]}

HORIKOSHI, Y ^{[1
]}

IGETA, K ^{[1
]}

BJORK, G ^{[1
]}

机构：

[1] ROYAL INST TECHNOL, S-10044 STOCKHOLM 70, SWEDEN

来源：

OPTICS COMMUNICATIONS | 1991年 / 80卷 / 5-6期

关键词：

D O I：

10.1016/0030-4018(91)90419-E

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Spontaneous emission of the free excitons in GaAs quantum wells in a microcavity is enhanced (X 130) or inhibited (X 1/30) by placing excitonic dipoles at either a resonant wavelength and anti-node position or an off-resonant wavelength and node position of the standing-wave vacuum field fluctuations. The resulting spontaneous radiation pattern is highly concentrated into the normal direction for the enhancement case and the spontaneous emission coupling efficiency into a single microcavity resonant mode is estimated to be 0.3. It is expected that semiconductor lasers with substantially reduced threshold currents can be constructed using such a structure.

引用

页码：337 / 342

页数：6

共 18 条

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