MISCIBILITY OF 3-V SEMICONDUCTORS STUDIED BY FLASH EVAPORATION

[1] Barrett C S, 1952, STRUCTURE METALS, V2rd

[2] FOLBERT O, 1958, Z NATURF, VA 13, P856

[3] FOLBERTH OG, 1959, Z NATURF, VA 14, P94

[4] PRAZISIONSBESTIMMUNG DER GITTERKONSTANTEN VON AIIIBV-VERBINDUNGEN [J]. ACTA CRYSTALLOGRAPHICA, 1958, 11 (05): : 369 - 371

[5] HOLONYAK N, 1962, 1961 AIME EMC C LOS, P49

[6] THE STATUS OF TRANSISTOR RESEARCH IN COMPOUND SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 959 - 968

[7] THE EPITAXIAL VAPOR DEPOSITION OF PEROVSKITE MATERIALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 969 - 973

[8] MULLER EM, 1963, ELECTROCHEM TECHNOL, V1, P158

[9] MULLER EW, TO BE PUBLISHED

[10] EPITAXIAL VAPOR GROWTH OF GAAS ON GE SINGLE CRYSTALS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (12) : 2591 - &

[1] Barrett C S, 1952, STRUCTURE METALS, V2rd

[2] FOLBERT O, 1958, Z NATURF, VA 13, P856

[3] FOLBERTH OG, 1959, Z NATURF, VA 14, P94

[4] PRAZISIONSBESTIMMUNG DER GITTERKONSTANTEN VON AIIIBV-VERBINDUNGEN [J]. ACTA CRYSTALLOGRAPHICA, 1958, 11 (05): : 369 - 371

[5] HOLONYAK N, 1962, 1961 AIME EMC C LOS, P49

[6] THE STATUS OF TRANSISTOR RESEARCH IN COMPOUND SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 959 - 968

[7] THE EPITAXIAL VAPOR DEPOSITION OF PEROVSKITE MATERIALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 969 - 973

[8] MULLER EM, 1963, ELECTROCHEM TECHNOL, V1, P158

[9] MULLER EW, TO BE PUBLISHED

[10] EPITAXIAL VAPOR GROWTH OF GAAS ON GE SINGLE CRYSTALS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (12) : 2591 - &