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REGENERATIVE SWITCHING DEVICE USING MBE-GROWN GALLIUM-ARSENIDE
被引:48
作者
:
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
WOOD, CEC
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
EASTMAN, LF
BOARD, K
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
BOARD, K
SINGER, K
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
SINGER, K
论文数:
引用数:
h-index:
机构:
MALIK, R
机构
:
[1]
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
[2]
UNIV WALES UNIV COLL SWANSEA,DEPT ELECT & ELECTR ENGN,SWANSEA SA2 8PP,W GLAM,WALES
[3]
UNIV MANCHESTER,INST SCI & TECHNOL,MANCHESTER M60 1QD,LANCS,ENGLAND
[4]
USA,FT MONMOUTH,NJ 07703
来源
:
ELECTRONICS LETTERS
|
1982年
/ 18卷
/ 15期
关键词
:
D O I
:
10.1049/el:19820460
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:676 / 677
页数:2
相关论文
共 3 条
[1]
MALIK RJ, 1981, I PHYS C SERIES, V56, P697
[2]
CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS
[J].
SHANNON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
SHANNON, JM
.
SOLID-STATE ELECTRONICS,
1976,
19
(06)
:537
-543
[3]
WOOD CEC, UNPUB J APPL PHYS
←
1
→
共 3 条
[1]
MALIK RJ, 1981, I PHYS C SERIES, V56, P697
[2]
CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS
[J].
SHANNON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
SHANNON, JM
.
SOLID-STATE ELECTRONICS,
1976,
19
(06)
:537
-543
[3]
WOOD CEC, UNPUB J APPL PHYS
←
1
→