REGENERATIVE SWITCHING DEVICE USING MBE-GROWN GALLIUM-ARSENIDE

被引:48
作者
WOOD, CEC
EASTMAN, LF
BOARD, K
SINGER, K
MALIK, R
机构
[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
[2] UNIV WALES UNIV COLL SWANSEA,DEPT ELECT & ELECTR ENGN,SWANSEA SA2 8PP,W GLAM,WALES
[3] UNIV MANCHESTER,INST SCI & TECHNOL,MANCHESTER M60 1QD,LANCS,ENGLAND
[4] USA,FT MONMOUTH,NJ 07703
关键词
D O I
10.1049/el:19820460
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:676 / 677
页数:2
相关论文
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MALIK RJ, 1981, I PHYS C SERIES, V56, P697
[2]   CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J].
SHANNON, JM .
SOLID-STATE ELECTRONICS, 1976, 19 (06) :537-543
[3]  
WOOD CEC, UNPUB J APPL PHYS