HOT-ELECTRON DIFFUSION IN FINE LINE SEMICONDUCTOR-DEVICES

被引:4
作者
JONES, WT
HESS, K
IAFRATE, GJ
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703
关键词
D O I
10.1016/0038-1101(82)90026-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1017 / 1021
页数:5
相关论文
共 20 条
[1]   MODIFICATION OF FICK LAW [J].
ALLEY, WE ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1979, 43 (10) :653-656
[2]   ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR-DEVICES .1. [J].
BARKER, JR ;
FERRY, DK .
SOLID-STATE ELECTRONICS, 1980, 23 (06) :519-530
[3]   TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J].
BLOTEKJAER, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :38-+
[4]   FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J].
BOZLER, CO ;
ALLEY, GD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1128-1141
[5]  
CONWELL EM, 1967, SOLID STATE PHYSIC S, V9, P187
[6]  
ELSAID MH, 1976, SOLID STATE ELECTRON, V20, P61
[7]   MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].
FAWCETT, W ;
BOARDMAN, AD ;
SWAIN, S .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&
[8]  
GRUBIN HL, VLSI ELECTRONICS MIC
[9]  
HARPER DH, 1978, P IEDM, V34
[10]  
Hess K., 1980, Physics of Nonlinear Transport in Semiconductors. Proceedings of the NATO Advanced Study Institute on Physics of Nonlinear Electron Transport, P1