NEW OXYGEN-INDUCED RECOMBINATION CENTERS 600-DEGREES-C TO 800-DEGREES-C HEAT-TREATED SILICON

被引：5

作者：

BORIMSKII, VV

GLINCHUK, KD

LITOVCHENKO, NM

SALNIC, ZA

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 84卷 / 01期

关键词：

D O I：

10.1002/pssa.2210840130

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：237 / 241

页数：5

共 7 条

[1] INVESTIGATION OF FORMATION CONDITIONS OF THERMAL DONOR-I AND DONOR-II IN OXYGEN-CONTAINING N-TYPE SILICON WITHIN THE TEMPERATURE-RANGE 400-DEGREES-C TO 800-DEGREES-C [J].

BARANSKII, PI ;

BABICH, VM ;

BARAN, NP ;

DOTSENKO, YP ;

KOVALCHUK, VB ;

SHERSHEL, VA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 78 (02) :733-739

[2] ANNEALING BEHAVIOR OF OXYGEN-INDUCED RECOMBINATION CENTERS IN SILICON [J].

BORIMSKII, VV ;

GLINCHUK, KD ;

LITOVCHENKO, NM ;

SALNIK, ZA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 80 (01) :343-348

[3]

CASCARRA V, 1980, J APPL PHYS, V51, P4206

[4] STRUCTURE AND FORMATION KINETICS OF OXYGEN-INDUCED RECOMBINATION CENTERS IN HEAT-TREATED SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM ;

SALNIK, ZA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (01) :83-87

[5] DECAY OF EXCESS CARRIERS IN THERMALLY TREATED OXYGEN-DOPED SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (02) :549-555

[6] ON THE EFFECT OF AMBIENTS ON THE FORMATION OF OXYGEN-RELATED DONORS IN CZ-SI [J].

SCHMALZ, K ;

GAWORZEWSKI, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 78 (02) :K141-K145

[7]

SCHMALZ K, 1983, PHYS ST SOL A, V77, P571

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