ELECTROOPTIC MODULATION BY ELECTRON-TRANSFER IN MULTIPLE INGAASP/INP BARRIER, RESERVOIR, AND QUANTUM-WELL STRUCTURES

被引：14

作者：

AGRAWAL, N ^{[1
]}

HOFFMANN, D ^{[1
]}

FRANKE, D ^{[1
]}

LI, KC ^{[1
]}

CLEMENS, U ^{[1
]}

WITT, A ^{[1
]}

WEGENER, M ^{[1
]}

机构：

[1] UNIV DORTMUND,FACHBEREICH PHYS,W-4600 DORTMUND 50,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.107958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently, a novel optical modulator heterostructure has been introduced based on voltage controlled electron transfer from a reservoir to a closely spaced quantum well. It has proven to exhibit large absorptive and refractive modulation at high speed and low power dissipation. In order to achieve monolithic integration with the existing high quality InGaAsP/InP lasers for high bit-rate systems, it is crucial to implement such devices within the same material system. In this letter, we demonstrate for the first time, InGaAsP/InP electron-transfer modulators grown using metalorganic vapor phase epitaxy.

引用

页码：249 / 251

页数：3

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