ENHANCED DIFFUSION FROM INTERSTITIAL TRAPPING DURING SOLID-PHASE-EPITAXIAL GROWTH OF SILICON ALLOYS

被引：8

作者：

PENNYCOOK, SJ

NARAYAN, J

HOLLAND, OW

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 70卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(84)90321-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：597 / 601

页数：5

共 12 条

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[4] RAPID THERMAL ANNEALING OF ARSENIC AND BORON-IMPLANTED SILICON [J].

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[5]

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[6] POINT-DEFECT TRAPPING IN SOLID-PHASE EPITAXIALLY GROWN SILICON-ANTIMONY ALLOYS [J].

PENNYCOOK, SJ ;

NARAYAN, J ;

HOLLAND, OW .

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[7]

PENNYCOOK SJ, 1984, P MATER RES SOC, V27, P97

[8] METASTABLE SOLID-SOLUTIONS OF ANTIMONY IN (100)SILICON [J].

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :731-736

[9]

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[10] ON THE NATURE OF POINT-DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON [J].

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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (02) :97-108

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