ELECTRICAL-ACTIVITY OF IMPURITIES IN BETA-RHOMBOHEDRAL BORON

被引：16

作者：

GOLIKOVA, OA

AMANDZHANOV, N

KAZANIN, MM

KLIMASHIN, GM

KUTASOV, VV

机构：

[1] A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the Ussr

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 121卷 / 02期

关键词：

D O I：

10.1002/pssa.2211210229

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The data are obtained of the electrical activity of Fe, Ni, Mn, Cu, Te, Re, W in β‐boron. These dopants are shown to be donors or acceptors depending on their disposition in nonequivalent voids of the lattice. Some information on the conduction mechanism and on the density of localized states in doped β‐boron is also obtained. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：579 / 586

页数：8

共 12 条

[1] AMANDZHANOV N, 1983, IAN SSSR NEORG MATER, V19, P325
[2] Arifov U.A., 1974, BORON SYNTHESIS STRU, P100
[3] GABUNIYA DL, 1975, THESIS STATE U GEORG
[4] Geist D., 1977, Boron and refractory borides, P65
[5] Golikova O.A., 1987, MATER RES SOC S P, V97, P17
[6] BORON AND BORON-BASED SEMICONDUCTORS
GOLIKOVA, OA
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (01): : 11 - 40
[7] KARIMOV RH, 1985, SBORNIK NAUCHN TRUDO, P104
[8] KLIMASHIN GM, 1987, FIZ TVERD TELA+, V29, P2503
[9] LUNDSTROM T, 1987, 9TH INT S BOR BOR RE, P53
[10] Naslain R., 1977, Boron and refractory borides, P139

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