VAPOR-DEPOSITION OF HIGH-PURITY GAAS EPILAYERS USING MONOETHYLARSINE

High-purity GaAs epitaxial layers have been successfully grown using the novel organoarsine reagent source, monoethylarsine (EtAsH2), with trimethylgallium (Me3Ga) as the gallium reagent. Films were found to be n type for all growth parameters examined (V/III=5-30, growth temperature=550-650°C). Film quality improved as V/III ratio increased, whereas the optimum growth temperature ranged between 575 and 600°C. The highest purity film produced using EtAsH2 and Me3Ga was grown using a V/III ratio of 30 and a growth temperature of 575°C. This epilayer exhibited mobilities of 55 300 cm2/V s and 7200 cm 2/V s at 77 and 300 K, respectively (as determined by van der Pauw-Hall measurements), and had a net carrier concentration of 6×10 14 cm-3. These results closely rival those of the best arsine alternatives studied to date, and indicate that EtAsH2 is an extremely promising reagent to replace arsine for use in vapor deposition applications.