SILICON-CARBIDE CONTROL IN THE EFG SYSTEM

被引:14
作者
RAJENDRAN, S
LARROUSSE, M
BATHEY, BR
KALEJS, JP
机构
[1] Mobil Solar Energy Corporation, Billerica, MA 01821
关键词
D O I
10.1016/0022-0248(93)90344-V
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Magnetic and thermal models of the EFG system and a model describing the transport of carbon in silicon melt within the capillary of a graphite die were used to determine the critical parameters controlling silicon carbide precipitation on the die walls. A new die tip design based on the computational findings proved to be more effective in reducing the amount of silicon carbide precipitation and increased the useful life of the die.
引用
收藏
页码:338 / 342
页数:5
相关论文
共 8 条
[1]  
Bird R.B., 2007, TRANSPORT PHENOMENA
[2]   RECENT PROGRESS IN OCTAGON GROWTH USING EDGE-DEFINED FILM-FED GROWTH [J].
HARVEY, DS .
JOURNAL OF CRYSTAL GROWTH, 1990, 104 (01) :88-92
[3]  
KALEJS JP, 1987, SILICON PROCESSING P, V2
[4]   MAGNETIC AND THERMAL FIELD MODEL OF EFG SYSTEM [J].
RAJENDRAN, S ;
CHAO, CC ;
HILL, DP ;
KALEJS, JP ;
OVERBYE, V .
JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) :82-87
[5]  
Rosenberger F., 1979, FUNDAMENTALS CRYSTAL, VI
[6]   SOLUBILITY OF CARBON IN SILICON AND GERMANIUM [J].
SCACE, RI ;
SLACK, GA .
JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (06) :1551-1555
[7]   EDGE-DEFINED FILM-FED GROWTH OF CONTROLLED SHAPE CRYSTALS [J].
SUREK, T ;
CHALMERS, B ;
MLAVSKY, AI .
JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) :453-465
[8]  
1991, Patent No. 5037622