INVESTIGATION OF RAPID-THERMAL-OXIDIZED POROUS SILICON

被引：35

作者：

LI, KH ^{[1
]}

TSAI, C ^{[1
]}

CAMPBELL, JC ^{[1
]}

HANCE, BK ^{[1
]}

WHITE, JM ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT CHEM & BIOCHEM,AUSTIN,TX 78712

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 26期

关键词：

D O I：

10.1063/1.109008

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report that the photoluminescence of porous Si that was quenched by low-temperature thermal annealing was restored by further annealing in an oxygen atmosphere at high temperature (750-degrees-C less-than-or-equal-to T less-than-or-equal-to 1100-degrees-C). The intensity of the photoluminescence recovered to near the as-anodized value and the peak wavelength was red shifted by approximately 100 nm. The oxidized porous Si has been found to have lower resistance and higher photoelectric efficiency than as-anodized material.

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页码：3501 / 3503

页数：3

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