WAVELENGTH MAPPING OF MIXED SEMICONDUCTORS USING AN AUTOMATIC IR SPECTROPHOTOMETER

被引:6
作者
CAPPER, P [1 ]
JONES, CL [1 ]
KENWORTHY, I [1 ]
BENNETT, MR [1 ]
DAVIDSON, D [1 ]
MCINTOSH, J [1 ]
机构
[1] EDINBURGH INSTRUMENTS LTD, EDINBURGH, SCOTLAND
来源
INFRARED PHYSICS | 1984年 / 24卷 / 05期
关键词
D O I
10.1016/0020-0891(84)90008-3
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:473 / 481
页数:9
相关论文
共 20 条
[1]   STUDY OF CASTING IN THE CDXHG1-XTE SYSTEM [J].
BARTLETT, BE ;
CAPPER, P ;
HARRIS, JE ;
QUELCH, MJT .
JOURNAL OF CRYSTAL GROWTH, 1979, 47 (03) :341-350
[2]   EFFECTS OF GROWTH SPEED ON THE COMPOSITIONAL VARIATIONS IN CRYSTALS OF CADMIUM MERCURY TELLURIDE [J].
BARTLETT, BE ;
CAPPER, P ;
HARRIS, JE ;
QUELCH, MJT .
JOURNAL OF CRYSTAL GROWTH, 1979, 46 (05) :623-629
[3]  
BLAIR J, 1961, METALLURGY ELEMENTAL, V12, P393
[4]   COMPARISON OF HG0.6CD0.4TE LPE LAYER GROWTH FROM TE-RICH, HG-RICH, AND HGTE-RICH SOLUTIONS [J].
BOWERS, JE ;
SCHMIT, JL ;
SPEERSCHNEIDER, CJ ;
MACIOLEK, RB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :24-28
[5]   GROWTH OF CDXHG1-XTE - COMPARISON OF SOME PROPERTIES WITH THE PREDICTIONS OF 2 MELT GROWTH-MODELS [J].
CAPPER, P ;
JONES, CL ;
PEARCE, EJ ;
QUELCH, MJT .
JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) :487-497
[6]   RECENT DEVELOPMENTS IN CADMIUM MERCURY TELLURIDE INFRARED DETECTORS [J].
CHARLTON, DE .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :98-110
[7]  
DITTMAR G, 1978, KRIST TECH, V13, P639, DOI [10.1002/crat.19770120615, 10.1002/crat.19780130606]
[9]   INFRARED OPTICAL-ABSORPTION OF HG1-XCDXTE [J].
FINKMAN, E ;
NEMIROVSKY, Y .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4356-4361
[10]   POSSIBLE METHOD FOR GROWTH OF HOMOGENEOUS MERCURY CADMIUM TELLURIDE SINGLE-CRYSTALS [J].
FIORITO, G ;
GASPARRINI, G ;
PASSONI, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) :315-317