PHOTOLUMINESCENCE STUDY OF DEFECT FORMATION DURING COPPER DIFFUSION IN ZN-DOPED GAAS

被引：20

作者：

HWANG, CJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 09期

关键词：

D O I：

10.1063/1.1656966

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4313 / &

共 22 条

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