PHOTOVOLTAIC EVIDENCE FOR INTERFACE-TRAPPED CHARGE IN X-RAY-IRRADIATED OXIDIZED N-TYPE SILICON-WAFERS

被引：11

作者：

MUNAKATA, C

WATANABE, K

机构：

[1] Central Res. Lab., Hitachi Ltd., Tokyo

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 07期

关键词：

D O I：

10.1088/0268-1242/6/7/008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is found that the AC surface photovoltage (SPV) increases after x-ray irradiation (8 kGy(Si) = 0.8 Mrad (Si)) in an air-free dry-oxidized and hydrogen-annealed n-type silicon (Si) wafer with resistivity 0.1-OMEGA m. Since the AC SPV is known to increase as the depletion layer becomes wider, the present phenomenon means that negative interface-trapped charge due to x-ray-induced interface traps must be dominant in the wafer. This result is also supported by the fact that the AC SPV in an as-oxidized n-type Si wafer with native high interface trap density (D(it)) is higher than that in a hydrogen-annealed wafer with resultant low D(it).

引用

页码：612 / 615

页数：4

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