HIGH-SPEED ELLIPSOMETRY OF ARSENIC-IMPLANTED SI DURING CW LASER ANNEALING

被引：9

作者：

MORITANI, A ^{[1
]}

HAMAGUCHI, C ^{[1
]}

机构：

[1] OSAKA UNIV,DEPT ELECTR ENGN,SUITA,OSAKA 565,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 08期

关键词：

D O I：

10.1063/1.95495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：746 / 748

页数：3

共 14 条

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[4]

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[5]

Moritani A., 1983, Journal de Physique Colloque, V44, P63, DOI 10.1051/jphyscol:19831012

[6] HIGH-SPEED RETARDATION MODULATION ELLIPSOMETER [J].

MORITANI, A ;

OKUDA, Y ;

KUBO, H ;

NAKAI, J .

APPLIED OPTICS, 1983, 22 (16) :2429-2436

[7] USE OF AN ADP 4-CRYSTAL ELECTROOPTIC MODULATOR IN ELLIPSOMETRY [J].

MORITANI, A ;

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NAKAI, J .

APPLIED OPTICS, 1983, 22 (09) :1329-1336

[8]

MORITANI A, 1984, 13TH C INT COMM OPT, P558

[9]

MULLER RH, 1973, ADV ELECTROCHEMISTRY, V9, P167

[10] ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON DURING LOW-TEMPERATURE ANNEAL [J].

NISHI, H ;

SAKURAI, T ;

FURUYA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :461-466

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