PHOTOINDUCED CHANGES IN THE PROPERTIES OF UNDOPED AND BORON-DOPED A-SI-H FILMS

被引:21
作者
GANGULY, G
RAY, S
BARUA, AK
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 54卷 / 04期
关键词
D O I
10.1080/13642818608239030
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:301 / 309
页数:9
相关论文
共 28 条
[1]   DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D .
PHYSICAL REVIEW LETTERS, 1978, 41 (25) :1755-1758
[2]   ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J].
ADLER, D .
SOLAR CELLS, 1983, 9 (1-2) :133-148
[3]   THE EFFECTS OF COMPENSATION ON LIGHT-INDUCED METASTABLE DEFECTS IN A-SI-H [J].
AMER, NM ;
SKUMANICH, A ;
JACKSON, WB .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :409-412
[4]   PROPERTIES OF UNDOPED AND PARA-TYPE HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS [J].
CHAUDHURI, P ;
RAY, S ;
BATABYAL, AK ;
BARUA, AK .
THIN SOLID FILMS, 1984, 121 (03) :233-246
[5]   PHOTOINDUCED CHANGES IN GLOW-DISCHARGE-DEPOSITED AMORPHOUS SILICON - STAEBLER-WRONSKI EFFECT [J].
ELLIOTT, SR .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (04) :349-356
[6]   DEFECT STATES IN AMORPHOUS SILICON [J].
ELLIOTT, SR .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04) :325-334
[7]   OPTICAL-CONSTANTS OF RF SPUTTERED HYDROGENATED AMORPHOUS SI [J].
FREEMAN, EC ;
PAUL, W .
PHYSICAL REVIEW B, 1979, 20 (02) :716-728
[8]  
FRITZSCHE H, 1984, AIP, V102, P229
[9]  
FRITZSCHE H, 1984, AIP C P, V120, P478
[10]   OBSERVATION OF PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON [J].
LANG, DV ;
COHEN, JD ;
HARBISON, JP ;
SERGENT, AM .
APPLIED PHYSICS LETTERS, 1982, 40 (06) :474-476