INTERFACE STATE EFFECTS IN PD-GATE MOS HYDROGEN SENSORS

被引：10

作者：

EVANS, NJ ^{[1
]}

PETTY, MC ^{[1
]}

ROBERTS, GG ^{[1
]}

机构：

[1] UNIV DURHAM, DEPT APPL PHYS & ELECTR, DURHAM DH1 3LE, ENGLAND

来源：

SENSORS AND ACTUATORS | 1986年 / 9卷 / 02期

关键词：

D O I：

10.1016/0250-6874(86)80018-X

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：165 / 175

页数：11

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