DYNAMIC BEHAVIOR OF THE BUILDUP OF FIXED CHARGE AND INTERFACE STATES DURING HOT-CARRIER INJECTION IN ENCAPSULATED MOSFETS

被引：38

作者：

MEYER, WG ^{[1
]}

FAIR, RB ^{[1
]}

机构：

[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 02期

关键词：

D O I：

10.1109/T-ED.1983.21081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：96 / 103

页数：8

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[5] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J].

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[6] ROLE OF HYDROGEN IN SIO2-FILMS ON SILICON [J].

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[7]

Sun R. C., 1980, 18th Annual Proceedings of Reliability Physics, P244, DOI 10.1109/IRPS.1980.362948

[8]

SVENSSON CM, 1978, PHYSICS SIO2 ITS INT, P328

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