PHONON-SCATTERING BY 3D IMPURITIES IN III-V SEMICONDUCTORS - EVIDENCE OF A LOW-SPIN GROUND-STATE FOR V2+ IN GAAS

被引：9

作者：

BUTLER, N

CHALLIS, LJ

SAHRAOUITAHAR, M

SALCE, B

ULRICI, W

机构：

[1] ACAD SCI GDR,ZENT INST ELEKTR PHYS,DDR-1086 BERLIN,GER DEM REP

[2] CEN,DEPT RECH FONDAMENTALE,SERV BASSES TEMP,CRYOPHYS LAB,F-38041 GRENOBLE,FRANCE

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1989年 / 1卷 / 07期

关键词：

D O I：

10.1088/0953-8984/1/7/003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1191 / 1203

页数：13

共 34 条

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