0-1S CORE LEVEL STUDIES OF THE OXIDATION OF GAAS(110)

被引：10

作者：

HUGHES, G

LUDEKE, R

MORAR, JF

JORDAN, JL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1079 / 1080

页数：2

共 10 条

[1] CHEMISORPTION OF OXYGEN AT CLEAVED GAAS(110) SURFACES - PHOTON STIMULATION AND CHEMISORPTION STATES [J].

BARTELS, F ;

MONCH, W .

SURFACE SCIENCE, 1984, 143 (2-3) :315-341

[2] OXYGEN AND HYDROGEN ADSORPTION ON GAAS(110) [J].

BARTELS, F ;

SURKAMP, L ;

CLEMENS, HJ ;

MONCH, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :756-762

[3] OXYGEN INTERACTION WITH GAAS-SURFACES - XPS-UPS STUDY [J].

BRUNDLE, CR ;

SEYBOLD, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1186-1190

[4] THE OXIDATION OF GAAS(110) - A REEVALUATION [J].

LANDGREN, G ;

LUDEKE, R ;

JUGNET, Y ;

MORAR, JF ;

HIMPSEL, FJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :351-358

[5] OXIDATION OF GAAS(110) - NEW RESULTS AND MODELS [J].

LANDGREN, G ;

LUDEKE, R ;

MORAR, JF ;

JUGNET, Y ;

HIMPSEL, FJ .

PHYSICAL REVIEW B, 1984, 30 (08) :4839-4841

[6] A CHEMICAL BONDING MODEL FOR THE NATIVE OXIDES OF THE III-V COMPOUND SEMICONDUCTORS [J].

LUCOVSKY, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :456-462

[7] OXIDATION OF GAAS (110) SURFACE [J].

LUDEKE, R .

SOLID STATE COMMUNICATIONS, 1977, 21 (08) :815-818

[8] DETERMINATION OF OXYGEN BINDING-SITE ON GAAS(110) USING SOFT-X-RAY-PHOTOEMISSION SPECTROSCOPY [J].

PIANETTA, P ;

LINDAU, I ;

GARNER, C ;

SPICER, WE .

PHYSICAL REVIEW LETTERS, 1975, 35 (20) :1356-1359

[9] OXIDATION PROPERTIES OF GAAS (110) SURFACES [J].

PIANETTA, P ;

LINDAU, I ;

GARNER, CM ;

SPICER, WE .

PHYSICAL REVIEW LETTERS, 1976, 37 (17) :1166-1169

[10]

SU CY, 1982, PHYS REV B, V25, P4054

← 1 →