ORIENTATION DEPENDENCE OF OPTICAL-PROPERTIES IN LONG-WAVELENGTH STRAINED-QUANTUM-WELL LASERS

被引：37

作者：

NIWA, A

OHTOSHI, T

KURODA, T

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1995年 / 1卷 / 02期

关键词：

D O I：

10.1109/2944.401199

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dependence of optical properties on crystal orientation is analyzed for long wavelength strained quantum-well (QW) lasers. The calculation is based on the multiband effective mass theory which enables us to consider the anisotropy and the nonparabolicity of the valence-band dispersions, It is found that the optical gain increases as the crystal orientation crystallographic directions, taking into is inclined from (001) toward (110). This is due to the reduced valence-band density of states. The differential gain is about 1.6 times larger for the (110)-oriented 1.55-mu m strained QW's than for equivalent (001)-oriented QW's, It is also shown that threshold current density in 1.3-mu m strained QW lasers decreases to two-thirds of that in the (001)-oriented laser as the orientation is inclined away from (001) by 40 degrees-90 degrees.

引用

页码：211 / 217

页数：7

共 22 条

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