DETERMINATION OF BUILT-IN-POTENTIAL IN N-I-P A-SI-H SOLAR-CELLS

被引：13

作者：

HAN, MK

SUNG, P

ANDERSON, WA

机构：

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 05期

关键词：

D O I：

10.1109/EDL.1982.25506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：121 / 124

页数：4

共 13 条

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LESTER, A ;

FONASH, SJ .

ELECTRON DEVICE LETTERS, 1980, 1 (10) :200-202

[2] AMORPHOUS SILICON SOLAR-CELL [J].

CARLSON, DE ;

WRONSKI, CR .

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[3]

CARLSON DE, 1979, AMORPHOUS SEMICONDUC, pCH10

[4]

Han M. K., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P685

[5]

HAN MK, 1981, ELECTRON DEVIC LETT, V2, P198

[6] INFLUENCE OF THIN METAL AS A TOP ELECTRODE ON THE CHARACTERISTICS OF P-L-NA-SI-H SOLAR-CELLS [J].

HAN, MK ;

ANDERSON, WA ;

LAHRI, R ;

COLEMAN, J .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :3073-3075

[7]

LAMPERT MA, 1970, CURRENT INJECTION SO, pCH2

[8]

LECOMBER PG, 1979, AMORPHOUS SEMICONDUC, pCH9

[9] INTERPRETATION OF CAPACITANCE AND CONDUCTANCE MEASUREMENTS ON METAL-AMORPHOUS SILICON BARRIERS [J].

SNELL, AJ ;

MACKENZIE, KD ;

LECOMBER, PG ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (01) :1-15

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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