ACTIVATION CHARACTERISTICS AND DEFECT STRUCTURE IN SI-IMPLANTED GAAS-ON-SI

被引：15

作者：

VERNON, SM ^{[1
]}

PEARTON, SJ ^{[1
]}

GIBSON, JM ^{[1
]}

SHORT, KT ^{[1
]}

HAVEN, VE ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 17期

关键词：

D O I：

10.1063/1.97949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1161 / 1163

页数：3

共 13 条

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[6]

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