HIGH-GAIN LATERAL HOT-ELECTRON DEVICE

被引：24

作者：

PALEVSKI, A

UMBACH, CP

HEIBLUM, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 14期

关键词：

D O I：

10.1063/1.101613

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1421 / 1423

页数：3

共 6 条

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HEIBLUM, M ;

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PHYSICAL REVIEW LETTERS, 1989, 62 (09) :1057-1060

[2] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS (THETA) - AMPLIFIERS OPERATING UP TO THE INFRARED [J].

HEIBLUM, M .

SOLID-STATE ELECTRONICS, 1981, 24 (04) :343-366

[3] STRUCTURED BASE HOT-ELECTRON TRANSISTORS [J].

HERBERT, DC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (11) :1129-1131

[4]

IMAMURA K, 1988, FUJITSU SCI TECH J, V24, P54

[5] LATERAL TUNNELING, BALLISTIC TRANSPORT, AND SPECTROSCOPY IN A TWO-DIMENSIONAL ELECTRON-GAS [J].

PALEVSKI, A ;

HEIBLUM, M ;

UMBACH, CP ;

KNOEDLER, CM ;

BROERS, AN ;

KOCH, RH .

PHYSICAL REVIEW LETTERS, 1989, 62 (15) :1776-1779

[6] HIGH-GAIN PSEUDOMORPHIC INGAAS BASE BALLISTIC HOT-ELECTRON DEVICE [J].

SEO, K ;

HEIBLUM, M ;

KNOEDLER, CM ;

OH, JE ;

PAMULAPATI, J ;

BHATTACHARYA, P .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (02) :73-75

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