ULTRALOW RESISTIVITY IN LANGMUIR-BLODGETT HETEROFILMS OF MUCH LESS THAN THE METAL RESISTIVITY AND ULTRAHIGH CURRENT-DENSITY

被引：9

作者：

HINO, T

KUSHIDA, M

机构：

[1] Department of Electrical Engineering, Kanagawa University, kanagawa-ku, Yokohama

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 12期

关键词：

LANGMUIR-BLODGETT (LB) HETEROFILM; ULTRALOW RESISTIVITY; ULTRAHIGH CURRENT DENSITY; POTENTIAL WELL; ELECTRON GAS;

D O I：

10.1143/JJAP.29.2792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultralow resistivity in Langmuir-Blodgett (LB) heterofilms of much less than the metal resistivity was briefly reported in the previous paper,(1) and such remarkable characteristics seem to be due to the two-dimensional potential well with electron gas generated in the LB heterofilms. In the present paper, detailed data of the ultralow resistivity are described with data related to temperature (room temperature approximately 75-degrees-C) and ambient air pressure. The minimum resistivity of 4.9 x 10(-2)-OMEGA.cm was measured; furthermore, an ultrahigh current density of 2.0 x 10(6) A/cm2 was observed.

引用

页码：2792 / 2799

页数：8

共 7 条

[1]

GINZBURG VL, 1969, CONTEMP PHYS, V9, P355

[2] ULTRALOW RESISTIVITY IN LANGMUIR-BLODGETT HETEROFILMS [J].

HINO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (03) :L486-L489

[3]

HINO T, 1988, T I ELECTR ENG JPN A, V108, P66

[4]

HINO T, 1987, T I ELECTR ENG JPN A, V107, P407

[5]

HINO T, 1976, T I ELECTR ENG JPN A, V95, P79

[6] CONDUCTING MONOLAYER OF SIMPLE CHARGE-TRANSFER COMPLEX ON A GLYCERIN SUBPHASE [J].

NAKAMURA, T ;

TAKEI, F ;

TANAKA, M ;

MATSUMOTO, M ;

SEKIGUCHI, T ;

MANDA, E ;

KAWABATA, Y ;

SAITO, G .

CHEMISTRY LETTERS, 1986, (03) :323-324

[7]

RAUDELTEIXIER A, 1985, MOL CRYST LIQ CRYST, V120, P319

← 1 →