ELECTRICAL INSTABILITY OF ULTRATHIN THERMAL OXIDES ON SILICON

被引：18

作者：

LUNDGREN, P

ANDERSSON, MO

FARMER, KR

ENGSTROM, O

机构：

[1] Department of Physics, New Jersey Institute of Technology, University Heights, Newark

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00017-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical stress of n-type metal - tunnel oxide - silicon (MTOS) diodes by applying a positive voltage to the metal results in the appearance of unstable positive charge in the oxide. This charge is observed by an increase in the direct tunnel current as well as a negative shift of the capacitance-voltage (C-V) characteristic. Effects similar to these have previously been observed for p-type MTOS diodes stressed with negative bias. This similarity makes injection of holes a less likely candidate for controlling the charging profess.

引用

页码：67 / 70

页数：4

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