MEASUREMENTS OF IONIZATION PRODUCED IN SILICON-CRYSTALS BY LOW-ENERGY SILICON ATOMS

被引：38

作者：

DOUGHERTY, BL

机构：

[1] Department of Physics, Stanford University, Stanford

来源：

PHYSICAL REVIEW A | 1992年 / 45卷 / 03期

关键词：

D O I：

10.1103/PhysRevA.45.2104

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We measured the ionization and the fluctuations in ionization produced in a Si(Li) detector by silicon atoms at five particular kinetic energies ranging from about 4 to 109 keV. The method is simple and precise, yet untried until now, and provides excellent calibration points for silicon. Our results are in good agreement with the predictions of Lindhard et al. [Mat. Fys. Medd. 33, 10 (1963)].

引用

页码：2104 / 2107

页数：4

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