PHOTO-LUMINESCENCE STUDIES ON THE LAYER SEMICONDUCTOR INSE

被引：15

作者：

ABHA

WARRIER, AVR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.331393

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5169 / 5171

页数：3

共 17 条

[1] OPTICAL TRANSITIONS IN SPECTRA OF FUNDAMENTAL ABSORPTION AND REFLECTION OF INSE SINGLE CRYSTALS [J].

ANDRIYAS.MV ;

SAKHNOVS.MY ;

TIMOFEEV, VB ;

YAKIMOVA, AS .

PHYSICA STATUS SOLIDI, 1968, 28 (01) :277-&

[2] RADIATIVE TRANSITIONS INDUCED IN GALLIUM-ARSENIDE BY MODEST HEAT-TREATMENT [J].

BIREY, H ;

SITES, J .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :619-634

[3]

CAMASSEL J, 1978, PHYS REV B, V17, P4718, DOI 10.1103/PhysRevB.17.4718

[4] ELECTRONIC BAND-STRUCTURE FOR POLYTYPES OF GASE [J].

DEPEURSINGE, Y .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 38 (02) :153-158

[5]

FIVAZ RC, PHYSICS CHEM MATERIA, V4

[6]

HASAN T, 1978, INDIAN J PURE AP PHY, V16, P575

[7] CRYSTAL-STRUCTURE OF INDIUM MONOSELENIDE (INSE) [J].

LIKFORMAN, A ;

CARRE, D ;

ETIENNE, J ;

BACHET, B .

ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1975, 31 (MAY15) :1252-1254

[8] BAND STRUCTURES OF GALLIUM AND INDIUM SELENIDE [J].

MCCANNY, JV ;

MURRAY, RB .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (08) :1211-1222

[9] DONOR-ACCEPTOR PAIR RECOMBINATION AND PHONON REPLICA IN GASXSE1-X [J].

MERCIER, A ;

VOITCHOVSKY, JP .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (12) :1411-1417

[10]

MUSHINSKII VP, 1972, SOV PHYS SEMICOND+, V6, P621

← 1 2 →