ULTRAFAST PHOTOINDUCED ELECTRON-TRANSFER ACROSS SEMICONDUCTOR LIQUID INTERFACES IN THE PRESENCE OF ELECTRIC-FIELDS

被引：32

作者：

ROSENWAKS, Y ^{[1
]}

THACKER, BR ^{[1
]}

NOZIK, AJ ^{[1
]}

ELLINGSON, RJ ^{[1
]}

BURR, KC ^{[1
]}

TANG, CL ^{[1
]}

机构：

[1] CORNELL UNIV,CTR MAT SCI,ITHACA,NY 14853

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1994年 / 98卷 / 11期

关键词：

D O I：

10.1021/j100062a007

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The rates of photoinduced electron transfer from p-InP to Fe(CN)64-/3- acceptors in aqueous electrolyte have been determined as a function of the initial potential drop (i.e., band bending (V(BO)) in the semiconductor space charge layer using femtosecond luminescence up-conversion techniques. The effects of electric field on electron transfer were separated from the effects of field-enhanced charge separation and surface recombination through a rigorous numerical solution of the coupled continuity and Poisson equations using a Cray supercomputer. A very strong dependence of the electron-transfer velocity (S(et)) on V(BO) was found, S(et) reached a saturation value of 5 X 10(7) cm/s when the initial value of V(BO) in the dark was greater-than-or-equal-to 0.5 eV. When the initial value of V(BO) was set near zero, S(et) was 9 X 10(3) cm/s. Hot electron injection processes appear to play a role in this behavior.

引用

页码：2739 / 2741

页数：3

共 36 条

[1]

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[2]

AHRENKIEL RK, 1993, SEMICONDUCTORS SEMIM, V39

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