EFFECT OF PRESSURE ON GUNN PHENOMENA IN GALLIUM ARSENIDE

被引：25

作者：

WASSE, MP

LEES, J

KING, G

机构：

来源：

SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 06期

关键词：

D O I：

10.1016/0038-1101(66)90001-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：601 / &

共 10 条

[1] MICROWAVE OSCILLATIONS IN GAASXP1-X ALLOYS (PULSED DC EXCITATION - E/T) [J].

ALLEN, JW ;

SHYAM, M ;

CHEN, YS ;

PEARSON, GL .

APPLIED PHYSICS LETTERS, 1965, 7 (04) :78-&

[2] IMPROVED TEST CELL MATERIAL FOR TETRAHEDRAL ANVIL APPARATUS [J].

ASHCROFT, K ;

GOODMAN, CHL ;

LEES, J .

NATURE, 1965, 205 (4972) :685-&

[3] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J].

BUTCHER, PN ;

FAWCETT, W .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P) :1205-&

[4] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].

EHRENREICH, H .

PHYSICAL REVIEW, 1960, 120 (06) :1951-1963

[5] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].

GUNN, JB .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&

[6] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J].

HILSUM, C .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02) :185-&

[7]

HOWARD WE, CITED INDIRECTLY

[8] MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J].

HUTSON, AR ;

JAYARAMAN, AG ;

CHYNOWETH, AG ;

CORIELL, AS ;

FELDMAN, WL .

PHYSICAL REVIEW LETTERS, 1965, 14 (16) :639-+

[9] LOAD DISCONTINUITY METHOD FOR PRESSURE CALIBRATION - TETRAHEDRAL ANVIL APPARATUS BELOW 25 KILOBARS [J].

LEES, J .

NATURE, 1964, 203 (494) :965-&

[10] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J].

RIDLEY, BK ;

WATKINS, TB .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500) :293-&

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