PHOTOELECTROPHORESIS OF COLLOIDAL SEMICONDUCTORS .3. TRANSIENT EXPERIMENTS ON SNO2 PARTICLES

被引:5
作者
BOXALL, C [1 ]
KELSALL, GH [1 ]
机构
[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT MINERAL RESOURCES ENGN,LONDON SW7 2BP,ENGLAND
来源
JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1992年 / 328卷 / 1-2期
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1016/0022-0728(92)80171-Y
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Some semiconductor particles, such as SnO2 (band gap approximately 3.5 eV), when irradiated with photons of energy greater than the band gap, exhibit changes in electrophoretic mobility. We report experimental data and a second-order kinetic model for the time dependence of photo-induced changes in electrophoretic mobilities of aqueous dispersions of SnO2 particles. All experiments were conducted in the absence of hole and electron scavengers. Comparisons are made between the behaviour, rate constants and quantum yields for surface charge generation found for colloidal SnO2 and those reported previously for TiO2.
引用
收藏
页码:75 / 97
页数:23
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