QUANTIZED HALL RESISTIVITY IN SI-MOSFETS MEASURED AT LIQ - HE-3 TEMPERATURES

被引：22

作者：

YOSHIHIRO, K ^{[1
]}

KINOSHITA, J ^{[1
]}

INAGAKI, K ^{[1
]}

YAMANOUCHI, C ^{[1
]}

MORIYAMA, J ^{[1
]}

KAWAJI, S ^{[1
]}

机构：

[1] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1982年 / 51卷 / 01期

关键词：

D O I：

10.1143/JPSJ.51.5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：5 / 6

页数：2

共 16 条

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AOKI, H ;

ANDO, T .

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[3]

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[5]

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[8] QUANTUM GALVANOMAGNETIC EXPERIMENTS IN SILICON INVERSION LAYERS UNDER STRONG MAGNETIC-FIELDS [J].

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[9]

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[10]

LAUGHLIN RB, 1981, PHYS REV B, V23, P5632, DOI 10.1103/PhysRevB.23.5632

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