THE TEMPERATURE-DEPENDENCE OF THE ETCH RATES OF GAAS, ALGAAS, INP, AND MASKING MATERIALS IN A BORON TRICHLORIDE-CHLORINE PLASMA

被引：32

作者：

CONTOLINI, RJ ^{[1
]}

机构：

[1] BELL COMMUN RES,RED BANK,NJ 07701

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 04期

关键词：

D O I：

10.1149/1.2095839

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：929 / 936

页数：8

共 27 条

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[9] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA [J].

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