RAMAN-SCATTERING EVALUATION OF LATTICE DAMAGE AND ELECTRICAL-ACTIVITY IN BE-IMPLANTED GAAS

被引：37

作者：

GARGOURI, M

PREVOT, B

SCHWAB, C

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.339237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3902 / 3911

页数：10

共 41 条

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