RAMAN-SCATTERING EVALUATION OF LATTICE DAMAGE AND ELECTRICAL-ACTIVITY IN BE-IMPLANTED GAAS

被引:37
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GARGOURI, M
PREVOT, B
SCHWAB, C
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D O I
10.1063/1.339237
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O59 [应用物理学];
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页码:3902 / 3911
页数:10
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