PHOTOINDUCED PARAMAGNETIC DEFECTS IN AMORPHOUS-SILICON DIOXIDE

被引：87

作者：

STATHIS, JH ^{[1
]}

KASTNER, MA ^{[1
]}

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.29.7079

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7079 / 7081

页数：3

共 18 条

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[6]

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[8] OBSERVATION AND ANALYSIS OF PRIMARY SI-29 HYPERFINE-STRUCTURE OF E' CENTER IN NON-CRYSTALLINE SIO2 [J].

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[9] MEASUREMENTS OF ABSORPTION-EDGE IN FUSED SILICA [J].

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[10] PARAMAGNETIC CENTERS ASSOCIATED WITH BONDING DEFECTS IN V-SIO2 [J].

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