INGAAS/INGAASP/INP STRAINED-LAYER QUANTUM-WELL LASERS AT SIMILAR-TO-2-MU-M

被引：71

作者：

FOROUHAR, S ^{[1
]}

KSENDZOV, A ^{[1
]}

LARSSON, A ^{[1
]}

TEMKIN, H ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 15期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920910

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first successful operation of InGaAs strained layer quantum well (SL-QW) injection lasers at approximately 2-mu-m is reported. The threshold current density and the external differential quantum efficiency of 5-mu-m wide and 800-mu-m long ridge waveguide lasers were 2.5 kA/cm2 and 6%, respectively. The devices had a reverse leakage current of less than 20-mu-A at -1 V indicating epitaxial layers with low defect density.

引用

页码：1431 / 1432

页数：2

共 10 条

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