OBSERVATIONS OF SPACE-CHARGE-LIMITED CURRENTS IN P-TYPE SILICON

被引：11

作者：

OKAZAKI, S

HIRAMATS.M

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(67)90013-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：273 / &

共 12 条

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[6] MCSKIMIN J, 1953, J APPL PHYS, V24, P988
[7] CARRIER DENSITY AND MOBILITY OBTAINED FROM SPACE-CHARGE-LIMITED CURRENT IN P-TYPE SILICON
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (06) : 555 - +
[8] OKAZAKI S, TO BE PUBLISHED
[9] SOME OBSERVATIONS OF SPACE CHARGE LIMITED CURRENT IN CADMIUM SULPHIDE CRYSTALS
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[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 80 (517): : 1133 - &
[10] SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS
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