A SIMULATION OF ELECTRON-SCATTERING IN METALS

被引:40
作者
KOTERA, M [1 ]
IJICHI, R [1 ]
FUJIWARA, T [1 ]
SUGA, H [1 ]
WITTRY, DB [1 ]
机构
[1] UNIV SO CALIF,DEPT ELECT ENGN & MAT SCI,LOS ANGELES,CA 90089
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期
关键词
Backscattered electron; Direct simulation; Electron cascade multiplication; Ilectron scattering in metals; Monte Carlo calculation; Secondary electron; Size effect; Ultimate resolution of SEM;
D O I
10.1143/JJAP.29.2277
中图分类号
O59 [应用物理学];
学科分类号
摘要
A Monte Carlo calculation model is developed to simulate trajectories of primary and ionized electrons in metals. It is constructed especially for a quantitative analysis of images in the scanning electron microscope. We perform a direct simulation considering each differential scattering cross section for elastic scattering, inner-shell electron ionization, conduction band electron ionization and bulk plasmon excitation. The spatial distribution of secondary electron emission calculated is narrower than that of backscattered electron emission at the Al surface for 1 keV primary electrons, but depending on the condition, this tendency may not always be found. The spatial distributions of both secondary and backscattered electrons show the size effect, and if the specimen to be observed is smaller, the practical resolution will be better in the scanning electron microscope. © 1990 IOP Publishing Ltd.
引用
收藏
页码:2277 / 2282
页数:6
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