2ND HARMONIC-GENERATION IN INGAASP WAVE-GUIDES AT 1.3 MU-M WAVELENGTH

We report the first surface emission of red light from an InGaAs waveguide, generated by the nonlinear mixing of two counterpropagating guided waves at wavelengths around 1.3 mum. A nine layer InGaAsP/InP heterostructure was grown by low pressure MOCVD on [100] InP substrate. All layers were n-doped with silicon to a level of 1.0 X 10(17) cm-3. The structures functioned in both planar as well as ridge waveguide configurations. Measurements were performed with both a YAG laser and a semiconductor laser in the pulsed as well as the cw regime and were compared with theoretical calculations, used in the design of the structure. Red light was detected even in a single slab InGaAsP waveguide with a cw semiconductor laser diode.