DOMAIN CONFIGURATIONS IN FERROELECTRIC PBTIO3 THIN-FILMS - THE INFLUENCE OF SUBSTRATE AND FILM THICKNESS

被引：33

作者：

STEMMER, S ^{[1
]}

STREIFFER, SK ^{[1
]}

ERNST, F ^{[1
]}

RUHLE, M ^{[1
]}

HSU, WY ^{[1
]}

RAJ, R ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

SOLID STATE IONICS | 1995年 / 75卷

基金：

美国国家科学基金会;

关键词：

DOMAIN CONFIGURATION; FILM SUBSTRATE INTERFACES; FERROELECTRICS; HRTEM;

D O I：

10.1016/0167-2738(94)00151-H

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Using transmission electron microscopy, we have compared the domain configurations in epitaxial, ferroelectric PbTiO3 films grown on different substrates and to different film thicknesses. These configurations change considerably between the different samples. In addition, we have characterized the film/substrate interfaces by high-resolution transmission electron microscopy. It is proposed that the elastic properties of the substrate play a role in determining the domain configuration by influencing the accommodation of tilts of the film lattice.

引用

页码：43 / 48

页数：6

共 12 条

[1]

DEVEIRMAN AEM, 1993, PHILIPS J RES, V47, P185

[2]

GAO Y, 1992, J MATER RES, V8, P145

[3]

HSU WY, 1994, THESIS CORNELL U

[4] STRAIN RELAXATION BY DOMAIN FORMATION IN EPITAXIAL FERROELECTRIC THIN-FILMS [J].