FABRICATION OF SIC EPITAXIAL STRUCTURES FOR DEVICES BY THE METHOD OF SUBLIMATION IN AN OPEN SYSTEM

被引：33

作者：

ANIKIN, MM

LEBEDEV, AA

PYATKO, SN

STRELCHUK, AM

SYRKIN, AL

机构：

[1] AF Ioffe Physico-Technical Institute, Academy of Sciences, St. Petersburg

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 11卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(92)90201-J

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth conditions of 6H-SiC epitaxial layers by an open sublimation method have been studied. Diodes, field effect transistors, UV photodiodes and Schottky barrier diodes are demonstrated.

引用

页码：113 / 115

页数：3