FUNCTIONAL MODELING OF NONVOLATILE MOS MEMORY DEVICES

被引：9

作者：

CARD, HC

ELMASRY, MI

机构：

[1] COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027

[2] UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA

来源：

关键词：

D O I：

10.1016/0038-1101(76)90044-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：863 / 870

页数：8

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[5]

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[6]

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[7] CHARGE-COUPLED MEMORY DEVICE [J].

CHAN, YT ;

FRENCH, BT ;

GUDMUNDSEN, RA .

[8]

CHEN LI, 1972, SOLID STATE ELECTRON, V15, P979, DOI 10.1016/0038-1101(72)90139-6

[9]

CRICCHI JR, 1973, DEC IEEE INT EL DEV, P126

[10]

ELMASRY MI, 1976, OCT IEEE CAN C COMM